? ? ? ? guilin strong micro-electronics co.,ltd. gm a 812( ? 2SA812) features c pnp general purpose transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?O - lO? v ceo - 50 vdc collector-base voltage ?O - O? v cbo - 60 vdc emitter-base voltage lO - O? v ebo - 5.0 vdc collector current continuous ?O - Bm ic - 100 madc thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg -55to+150
? ? ? ? guilin strong micro-electronics co.,ltd. gm a 812( ? 2SA812) device marking gm a 812 ( ? 2SA812) =m4-m7 h fe :90-180=m4 135-270=m5 200-400=m6 300-600=m7 electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ e ? ma x ? unit off characteristics ? emitter cutoff current lO? (v eb = - 5.0v,i c =0) i ebo - 0.1 a collector cutoff current ?O? (v cb = - 60v,i e =0) i cbo - 0.1 a collector to emitter saturation voltage ?O?? (ic= - 100madc,i b = - 10ma) v ce(sat) - 0.1 8 - 0.3 vdc base to emitter saturation voltage O?? (ic= - 100madc,i b = - 10ma) v b e(sat) - 1.0 vdc base to emitter voltage O - lO? (v ce = - 6.0v,i c = - 1.0ma) v be - 0.5 8 - 0.62 - 0.6 8 vdc dc current gain ? (v ce = - 6.0v,i c = - 1.0ma) h fe 9 0 600 gain bandwidth product ?e (v ce = - 6.0v,i c = - 1.0ma) f t 180 mhz output capacitance ? (v cb = -10 v,i e =0,f=1.0mhz) c ob 4 . 5 pf 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina.
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